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| Power Transistors 2SD1326 Silicon NPN triple diffusion planar type Darlington 0.70.1 For midium speed power switching Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 4.20.2 s Features q q q q q 14.00.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25C) Ratings 6010 6010 5 8 4 40 2 150 -55 to +150 Unit V V V A A W C C Solder Dip Incorporating a zener diode of 60V zener voltage between collector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching Full-pack package which can be installed to the heat sink with one screw 16.70.3 4.0 7.50.2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) 3 Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2*1 VCE(sat) VBE(sat) fT ton tstg tf Es/b*2 Conditions VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 5mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA IC = 3A, IB = 12mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = -12mA, VCC = 50V IC = 2A, L = 100mH, RBE = 100 *2E s/b min typ max 100 2 Unit A mA V 50 1000 2000 70 10000 2.5 4 2.5 20 0.3 3 1 V V MHz s s s mJ Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Energy handling capability *1h FE2 50 Rank classification Q P Test circuit X L Y RBE 1 G Rank hFE2 60Hz mercury relay 2000 to 5000 4000 to 10000 120 6V 1 Power Transistors PC -- Ta 50 12 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 10 2SD1326 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=250 30 10 3 1 TC=100C -25C 0.3 0.1 0.03 0.01 0.01 0.03 25C VCE(sat) -- IC Collector power dissipation PC (W) Collector current IC (A) 40 (1) 8 30 6 20 IB=4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 4 10 (2) (3) (4) 2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 100000 IC/IB=250 hFE -- IC 1000 VCE=3V 300 IC -- Lcoil RBE=100 TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 30000 TC=100C 10000 Collector current IC (A) 25C -25C 100 30 10 3 1 0.3 0.1 50mJ TC=-25C 100C 25C 3000 1000 300 100 30 10 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 1 3 10 30 100 300 1000 Collector current IC (A) Collector current IC (A) Load inductance Lcoil (mH) Area of safe operation (ASO) 1000 300 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 100 30 10 ICP t=1ms 3 IC DC 1 0.3 0.1 1 3 10 30 100 300 1000 10ms 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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